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Effect of bismuth oxide nanoparticles on the physicochemical properties of porous silicon thin films

Abstract : In this work, bismuth oxide nanoparticles were successfully deposited on porous silicon (PSi) in order to enhance the light absorption and reduce the optical losses. The obtained bismuth oxide (Bi2O3)/PSi samples were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscopy (SEM) combined with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), photoluminescence (PL), UV–visible absorption and reflection spectroscopy techniques. The XRD studies revealed the formation of the monoclinic α-Bi2O3 phase. The XPS analysis demonstrates the formation of highly pure Bi2O3 nanoparticles in accordance with XRD results. The SEM and AFM analyses confirmed that the bismuth oxide nanoparticles are well incorporated and uniformly distributed over the surface of PSi without changes in the arrangement and shape of the pores, resulting in an optimized microstructure. The Bi2O3/PSi films showed better absorption than PSi layers as indicated by UV–Vis absorption technique. The reflection measurements confirmed a further reduction in reflectivity of PSi from 6.4 to 3.5% after the inclusion of Bi2O3 nanoparticles, which is of significant importance for solar cells application since it can enhance its conversion efficiency. The Bi2O3/PSi films have a great promise to be used as efficient antireflection coatings in innovative concepts of higher efficiency and cost-effective solar cells.
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https://hal-univ-bourgogne.archives-ouvertes.fr/hal-02470379
Contributeur : Le2i - Université de Bourgogne <>
Soumis le : vendredi 7 février 2020 - 11:31:00
Dernière modification le : vendredi 17 juillet 2020 - 14:59:14

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S Oussidhoum, D Hocine, M. Bensidhoum, D. Chaumont, E. Bourennane, et al.. Effect of bismuth oxide nanoparticles on the physicochemical properties of porous silicon thin films. Bulletin of Materials Science, Indian Academy of Sciences, 2020, 43 (1), ⟨10.1007/s12034-019-2001-3⟩. ⟨hal-02470379⟩

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